PDH8974 mosfets equivalent, n-channel mosfets.
* 80V,120A, RDS(ON) =3.9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Ne.
TO263 Pin Configuration D
D
G S
G S
BVDSS 80V
RDSON 3.9m
ID 120A
Features
* 80V,120A, RDS(ON) =3.9mΩ@VGS =.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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